Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111)Template  

作　　者：Liu Zhe Wang Junxi Wang Xiaoliang Hu Guoxin Guo Lunchun Liu Hongxin Li Jianping Li Jinmin Zeng Yiping 刘喆;王军喜;王晓亮;胡国新;郭伦春;刘宏新;李建平;李晋闽;曾一平(Novel Materials Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]Novel Materials Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Journal of Rare Earths》2006年第z1期11-13,共3页稀土学报(英文版)

基　　金：Project supported by Special Funds for Major State Basic Research Project(G2000683 and 2002CB311903);Nationel Natural Foundation of China(60136020);Key Imnovation Program of Chinese Academy of Science and National High Technology R&D Pogram of China(2002AA305304)

摘　　要：The surface morphology of GaN grown by MOCVD on GaN/Si template was studied.Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied.The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature.The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template.The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects.The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

关 键 词：surface morphology GaN/Si template GAN MOCVD 

分 类 号：TN304.2[电子电信—物理电子学]