Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD  

作　　者：Fang Cebao Wang Xiaoliang Hu Guoxin Wang Junxi Wang Cuimei Li Jinmin 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Journal of Rare Earths》2006年第z1期14-18,共5页稀土学报（英文版）

基　　金：Project supported by Special Funds for Major State Basic Research Project (G20000683 and 2002CB311903); National Natural Science Foundation of China (60136020); Key Innovation Program of Chinese Academy of Science and National High Technology R&D Program of China (2002AA305304)

摘　　要：High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

关 键 词：MOCVD GAN RESISTIVITY TSC 

分 类 号：TN304.2[电子电信—物理电子学]