沉淀法制备Sm^(3+),Er^(3+)与Nd^(3+)一次共掺杂的BaTiO_3基半导体陶瓷电容器  

Semiconductive Ceramic Capacitor Based BaTiO_3 Synthesized with Coprecititation Doped with Nd^(3+) and Sm^(3+) or Er^(3+)

作　　者：柴艮风[1] 施哲[1] 陈玉林[1] 李春花[1] 

机构地区：[1]昆明理工大学材料与冶金学院,云南昆明650093

出　　处：《中国稀土学报》2006年第z1期96-101,共6页Journal of the Chinese Society of Rare Earths

摘　　要：在共沉淀法的基础上,通过双施主不同浓度的Nd3+和Sm3+,Er3+(4.0%~5.0%)掺杂,研究了BaTiO3基表面型陶瓷电容器的电性能,结果表明,Sm3+和Er3+的掺杂可以提高居里温度,但使介电常数降低,其含量为25%时可获得绝缘电阻500 MΩ左右,C/S为0.5895μf.cm-2电性能参数。The electrical properties of semiconductive ceramic capacitor based BaTiO3 synthesized with coprecititation doped with Nd3+ with Sm3+ or Er3+ with different concentration(4.0% to 5.0%(mole fraction)) were investigated.The ε decrease and the TC increase doped with Sm3+ or Er3+.The R is about 500 MΩ and the C/S is 0.5895 μf·cm-2 is acquired with the content of 25% of Sm3+ or Er3+.

关 键 词：共沉淀法 半导体陶瓷电容器 施主掺杂 稀土 

分 类 号：TG111.91[金属学及工艺—物理冶金] TG172.5[金属学及工艺—金属学]