深亚微米IC超浅结的SIMS表征  

Characterization of Ultra-shallow Junction in DSM IC by Secondary Ion Mass Spectrometry

作　　者：瞿欣[1] 王家楫[1] 

机构地区：[1]复旦大学材料科学系,上海,200433 复旦大学材料科学系,上海,200433

出　　处：《质谱学报》2005年第z1期13-14,共2页Journal of Chinese Mass Spectrometry Society

摘　　要：Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.

关 键 词：SIMS ULTRA-SHALLOW JUNCTION LOW-ENERGY ion IMPLANT 

分 类 号：O657.63[理学—分析化学]