sponsored by the PhD Research Foundation of Hebei GEO University(BQ2017027)
At present,there is less theoretical research and practical experience in the aspect of ultrashallow seismic exploration to the target layers at depths of only tens of meters both at home and abroad. Seismic explorati...
Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was ext...
The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined...