薄膜热导率测量结构的研究  

A Structure for Measuring Thermal Conductivity of Thin Film

作　　者：宋青林[1] 夏善红[1] 陈绍凤[1] 吕耀[1] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室,北京100080

出　　处：《仪器仪表学报》2004年第z1期228-229,共2页Chinese Journal of Scientific Instrument

基　　金：国家973资助项目(G1999033102)。

摘　　要：提出了一种用于薄膜热导率测量的微器件。利用微机械加工技术制作出相应的结构,其桥状薄膜的面积为800μm×2000μm,悬梁的面积为30μm×100μm,薄膜电阻经悬梁穿过氮化硅薄膜用于加热和测温。薄膜上的热流和温度分布十分均匀,可减小系统误差。实验中对0.5μm到2μm的一系列氮化硅薄膜进行了测量,得到了薄膜热导率的尺寸效应。A new device for measuring the thermal conductivity of thin film is presented. It is fabricated using micromachining process, which is 800μm×2000μm bridge membrane with 30μm×100μm beams. The heater and the thermometer across the bridge membrane through the beams to be used to create heat flux and measure the temperature. On the membrane, the heat flux and the temperature distribution are very uniform, so it makes the system error very low. Silicon nitride thin films with thickness from 0.5μm to 2μm are researched using the technique. The measured results support the size effect of the thermal conductivity for thin film.

关 键 词：薄 膜 热导率 桥状结构 

分 类 号：TH7-55[机械工程—仪器科学与技术]