微波半导体功率器件及其应用  

Microwave Semiconductor Power Devices and Their Applications

作　　者：程文芳[1] 盛柏桢[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2003年第1期26-33,共8页Electronics & Packaging

摘　　要：本文介绍了微波半导体技术主要特点,功率器件和单片集成电路特性及其应用。the Chief Characteristics of microwave semiconductor technology are introduced in the paper, including the properties of power devices monolithic integrated circuits and their applications.

关 键 词：微波 高电子迁移率晶体管(HEMT) 异质结双极晶体管(HBT) 单片集成电路 

分 类 号：TN385[电子电信—物理电子学]