4H-SiC npn BJT特性研究  

Study on Characteristics of 4H-SiC npn BJT

作　　者：龚欣[1] 张进城[1] 郝跃[1] 张晓菊[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《电子学报》2003年第z1期2201-2204,共4页Acta Electronica Sinica

基　　金：国家重大基础研究项目 (973) (No .2 0 0 2CB31 1 90 4 )

摘　　要：基于二维器件仿真软件Medici对 4H SiC双极型晶体管 (BJT)进行了建模 ,包括能带模型、能带窄变模型、迁移率模型、产生复合模型和不完全电离模型 ,为 4H SiC的工艺与器件提供了设计平台 .在此基础上对 4H SiCBJT器件进行了模拟研究 .结果显示 ,器件基极电流IB=1μA/μm时发射极电流增益 β为 32 .4 ,击穿电压BVCEO大于 80 0V ,截止频率fT 接近A model of 4H-SiC bipolar junction transistor (BJT) based on two-dimensional device simulator Medici is presented.The model,in which bandgap model,mobility model,generation and recombination model and incomplete ionization model are included,provides a design platform for 4H-SiC technologies and devices.The simulation results show that the common-emitter current gain β is 32.4 while the base current I B equals to 1μA/μm with the breakdown voltage BV CEO more than 800V and the cut-off frequency f T close to 1GHz.

关 键 词：4H-SIC 物理模型 双极型晶体管 

分 类 号：TN304.2[电子电信—物理电子学]