集成铁电器件中的关键工艺研究  

Study on the Key Processes of Integrated Ferroelectric Device

作　　者：杨轶[1] 张宁欣[1] 任天令[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《仪器仪表学报》2003年第z2期192-193,共2页Chinese Journal of Scientific Instrument

基　　金：国家"863"(2002AA404500)资助;"973"(G1999033105)资助

摘　　要：对集成铁电器件中的关键工艺进行了研究,采用改进的溶胶—凝胶(Sol-Gel)法制备了高品质、(110)择优取向的锆钛酸铅(PZT)铁电薄膜,成功的利用离子束刻蚀(IBE)、反应离子刻蚀(RIE)和湿法腐蚀方法对PZT薄膜进行了刻蚀加工,采用正胶剥离和干法刻蚀工艺实现了金属铂(Pt)电极图形,为集成铁电器件的实现提供了良好的工艺基础。Key processes of integrated ferroelectric devices based on silicon have been studied. High quality and (110) preferential oriented ferroelectric thin films, lead zirconate titanate (PZT), have been prepared using an improved sol-gel method. PZT thin films have been successfully patterned by ion beam etching (IBE), reactive ion etching (RIE) and wet etching. The platinum electrodes have been well patterned by lift-off process and dry etching techniques.

关 键 词：铁电薄膜 锆钛酸铅 溶胶-凝胶 刻 蚀 剥 离 

分 类 号：TN4[电子电信—微电子学与固体电子学]