利用IDDQ技术测试CMOS器件  

IDDQ Testing in CMOS Digital Devices

作　　者：朱恒静[1] 

机构地区：[1]航天511所

出　　处：《国外电子测量技术》2001年第z1期36-37,43,共3页Foreign Electronic Measurement Technology

摘　　要：早在1960年,IC制造者利用I_(DDQ)技术测试器件是否存在功耗过大的问题。现在,I_(DDQ)成为CMOS电路故障检测的重要项目,已广泛用于测试功能测试所不能发现的制造过程所产生的故障。I_(DDQ)和功能测试相结合,可大大改善故障覆盖率,提高测试的有效性。As early as 1960,IC makers tested whether the devices exist excessive power consumption by using the IDDQ technology. Now IDDQ have become important means for circuit fault detection of the CMOS. It widely is used to measure fault that don t find it by using the functional test. IDDQ in combination with function test can achieve highest quility and reliability

关 键 词：IDDQ测试 缺陷 故障 功能测试 

分 类 号：TM930.12[电气工程—电力电子与电力传动]