CVD金刚石薄膜半导体材料的研究进展  

DEVELOPMENT OF SYNTHESIZING CVD DIAMOND FILMS FOR SEMICONDUCTOR MATERIALS

作　　者：孙蕾[1] 满卫东[2] 汪建华[2] 谢鹏[1] 熊礼威[2] 李远[1] 

机构地区：[1]武汉工程大学材料学院,湖北武汉430073 [2]湖北省等离子体化学与新材料重点实验室,湖北武汉430073

出　　处：《真空与低温》2008年第3期134-139,171,共7页Vacuum and Cryogenics

基　　金：湖北省教育厅Q20081505项目的资助;武汉工程大学绿色化工过程省部共建教育部重点实验室开放基金RGCT200801的资助。

摘　　要：含Ⅲ族与Ⅴ族元素掺杂的金刚石是宽禁带的半导体材料,同时具有优异的物理和化学特性,在电子器件与光电子器件方面的应用具有极大潜力,成为近几年来国内外研究的热点之一。介绍了目前常用的掺杂方法、技术水平及金刚石半导体的应用前景。Diamond doped with Ⅲ or Ⅴ subgroup elements is a kind of wide-bandgap semiconductor with superior physical and chemical properties. Due to its exceptional properties, semi-conducting diamond has promising good potentitil in electronic and optoelectronic devices. The current status and technology of diamond doping (including CVD method and ion implantation) were reviewed and the prospect of diamond semiconductor was presented.

关 键 词：金刚石薄膜 掺杂 半导体 N型 P型 

分 类 号：TN304.055[电子电信—物理电子学]