高温激活的变掺杂GaAs光电阴极研究  

Varying doping GaAs photocathode by high temperature activation

作　　者：陈怀林[1] 常本康[1] 张俊举[1] 杜晓晴[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《红外与激光工程》2008年第S2期756-761,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60678043)

摘　　要：为了获得高量子效率的GaAs光电阴极,要求GaAs材料的电子扩散长度足够长,且电子表面逸出几率大,而这两个参数都要受到P型掺杂浓度的限制。经过对由体内到表面掺杂浓度由高到低的变掺杂GaAs光电阴极进行比较深入的激活实验和光谱响应理论研究,实验结果显示,适当的表面掺杂浓度GaAs光电阴极材料,在高温激活结束后获得了较高的灵敏度和较好的稳定性。根据实验结果和反射式变掺杂GaAs光电阴极量子效率理论预测曲线,对变掺杂GaAs光电阴极材料掺杂结构提出了进一步优化的思路。研究表明,变掺杂GaAs光电阴极将成为发展我国高性能GaAs光电阴极的一项重要途径。High quantum efficiency GaAs photocathode has been obtained which has enough long diffusing length and big probability of surface emitting. The two parameters are limited by impure density of p type. An activation experiment of varying doping GaAs photocathode form inner to surface and from low to high has been carried out and the corresponding spectral response has been studied, and results shows that appropriate impure density may obtain GaAs photoelectronic material of high responsively and stability. Ac...

关 键 词：GAAS 光电阴极 光谱响应 性能评估 在线测量 

分 类 号：TN203[电子电信—物理电子学]