波长延伸(1.7～2.7μm)InGaAs高速光电探测器的研制  

Fabrication of wavelength extended(1.7～2.7 μm)InGaAs high speed photodetectors

作　　者：张永刚[1] 顾溢[1] 王凯[1] 李成[1] 李爱珍[1] 郑燕兰[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《红外与激光工程》2008年第S3期38-41,共4页Infrared and Laser Engineering

基　　金：国家973部分资助项目(2006CB604903)

摘　　要：采用气态源分子束外延方法和化合物半导体工艺研制了波长延伸的InGaAs探测器,其室温下的截止波长已由1.7μm拓展至2.7μm。对此探测器系列的特性进行了细致的测量表征,结果表明此类探测器十分适合在室温条件下工作,且在热电制冷温度下其性能可大为改观。瞬态特性测量结果表明此探测器系列可在高速下工作,实测响应速度已达数十ps量级,可以满足此波段激光雷达等方面的需要。Wavelength extended InGaAs photodetectors have been fabricated by using gas source molecular beam epitaxy and processing, the cutoff wavelength have been extended from 1,7μm to 2.7μm. The characteristics of the detectors have been investigated in detail, results show that these detectors are quite suitable for the applications at room temperature, and the performances were improved dramatically at thermal-electric cooled temperatures. Transient measurement show that these detectors have high speed features,...

关 键 词：光电探测器 化合物半导体 铟镓砷 气态源分子束外延 

分 类 号：TH74[机械工程—光学工程]