离子束刻蚀HgCdTe成结机制分析  

The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling

作　　者：何波[1] 马忠权[1] 史衍丽[2] 徐静[3] 赵磊[1] 李凤[1] 沈成[1] 沈玲[1] 

机构地区：[1]上海大学理学院物理系,上海200444 [2]昆明物理研究所,昆明650223 [3]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《光电子技术》2009年第1期14-17,22,共5页Optoelectronic Technology

基　　金：上海市教委创新基金资助项目(08YZ12);上海大学-索朗光伏材料与器件R&D联合实验室的发展基金资助项目(SS-E0700601)

摘　　要：根据由离子束刻蚀HgCdTepn结C-V曲线,判定其为线性缓变结;由1C3-V曲线斜率可知杂质浓度分布梯度。利用泊松方程(零偏压时耗尽层宽度作为边界条件)积分计算出其电场分布、电势分布等重要结特性。并且进一步从微观理论分析讨论了离子束刻蚀HgCdTe成结机制过程。The HgCdTe pn junction formed by ion beam milling is a linearly graded junction judged by its C-V curve.And the grade of impurity concentration distribution was known from 1C3-V curve.Some important characteristics,such as build-in electric field distribution,build-in potential distribution were calculated by poisson′equation.Then the process and mechanism of HgCdTe ion beam milling junction have already been analyzed based on micro-theory in detail.

关 键 词：HGCDTE 离子束刻蚀 泊松方程 Hg源扩散 

分 类 号：TN304[电子电信—物理电子学]