不同晶格基底上薄膜生长的Monte Carlo模拟研究  

Monte Carlo simulation and study of thin film growth on different crystal substrate

作　　者：谭天亚[1] 李春梅[1] 苏宇[1] 张静[1] 吴炜[1] 郭永新[1] 

机构地区：[1]辽宁大学物理学院沈阳市光电子功能器件与检测技术重点实验室,沈阳110036

出　　处：《原子与分子物理学报》2009年第2期343-348,共6页Journal of Atomic and Molecular Physics

基　　金：沈阳市科学技术计划项目(1071115-1-00);辽宁省教育厅科研项目计划(2008224);辽宁省科技厅科研项目(20081030)

摘　　要：利用Monte Carlo(MC)方法模拟研究了四方和六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明,基底晶格结构对薄膜生长具有明显影响.当基底温度为300K、入射粒子剩余能量为0时,四方晶格基底上薄膜的生长已经呈现明显的凝聚生长,随着基底温度或入射粒子剩余能量的增加,岛的数目变少、岛的平均尺寸变大.对于六方晶格基底,当入射粒子剩余能量为0、温度从300K升高到350K时,岛的形貌从分散生长向分形生长转变;当基底温度为300K、入射粒子剩余射能量从0上升到0.05eV时,岛由分散生长向分形生长转变.The effect of the substrate temperature and the rest energy of incident particles on the island morphology and size at the early stage of thin film growth on tetragonal and hexagonal substrates are studied by Monte-Carlo simulation.In our model,three processes are considered.:particle deposition,adatom diffusion and adatom reevaporation.The result shows that the lattice structure of the substrate has an obvious effect on the thin film growth.With the rest energy of the incident particles of zero,the thin film growth on the tetragonal substrate has been taken on condensation at the temperature of 300 K. With increase of temperature and rest energy of incident particles,the number of islands becomes less and the mean size of each island is increased.But for the hexagonal substrate,the island growth transits from sporadic to fractal shape with temperature increasing from 300 K to 350 K when the rest energy of the incident particles equals zero;the thin film growth changes from sporadic to fractal shape with rest energy of the incident particles increasing from zero to 0.05 eV when the temperature of the substrate is 300K.

关 键 词：MONTE CARLO模拟 薄膜生长 晶格 基底温度 入射粒子剩余能量 

分 类 号：O484.1[理学—固体物理]