蓝宝石晶片研磨工艺的研究  

An Experimental Study of the Grinding Technics for Sapphire Wafer

作　　者：王永辉[1] 赵慧峰[1] 

机构地区：[1]三门峡职业技术学院电气工程系,河南三门峡472000

出　　处：《三门峡职业技术学院学报》2009年第1期119-121,共3页Journal of Sanmenxia Polytechnic

摘　　要：通过对蓝宝石晶片研磨试验的研究,得出了不同磨料种类、不同磨料浓度和加工压力对表面粗糙度和材料去除率的影响。结果表明,在众多磨料中SiO2比较适宜研磨,用此磨料在浓度15wt%时材料去除率比较高,在压力9.8N时综合效果较佳,而MgO磨料适合获得理想表面粗糙度。Through studying the experiment about sapphine wafer grinding,the article finds the effect of different abrasive,abrasive concentration and processing pressure on surface roughness and material removal rate.The results show that Si02 is more appropriate abrasive,and the material removal rate is relatively high in the 15wt%,the impact is better in 9.8N pressure,but MgO is ideal for surface soughness.

关 键 词：蓝宝石晶片 研磨 工艺参数 

分 类 号：TS933.21[轻工技术与工程]