等离子体刻蚀处理大面积金刚石薄膜  

Plasma Treatment of Diamond Films with Large Area

作　　者：苟立[1] 郑元元[1] 冉均国[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610065

出　　处：《微细加工技术》2007年第1期28-31,共4页Microfabrication Technology

基　　金：国家自然科学基金资助项目(10275046)

摘　　要：平整均匀的大面积金刚石膜是其在电子领域工业化应用的前提。采用微波等离子体化学气相沉积装置,分别用氢气、氮气加空气、氧气对大面积金刚石膜进行了等离子体处理,通过表面形貌和电阻率的均匀性表征金刚石膜的均匀性,用电阻率的大小表征绝缘性,并采用原子力显微镜测量膜的表面粗糙度。用氮气加空气处理后,金刚石膜的电阻率提高了5个数量级,达到了1013Ω.cm,更好地满足了电子器件对绝缘性的要求,且均匀性较好,表面粗糙度Ra为90 nm^111 nm,但平整性仍须改进。Smooth and uniform diamond films with large area are essential for their applications in electronics due to excellent properties of diamond. Using microwave plasma chemical vapor deposition, diamond films were treated with hydrogen, air combined nitrogen, oxygen plasma, respectively. The uniformity of diamond films were characterized by the uniformity of surface morphology and resistivity, the insulation property of the films was characterized by resistivity and the surface roughness was tested by atomic force microscopy (AFM). The results indicate that the resistivity of diamond films is improved by 5 orders of magnitude by means of post-treatment with air combined nitrogen, up to 10 Ω·cm, which will satisfy the requirement of electronic components for insulation. Simultaneously, the results also indicate that the diamond films are uniform. The AFM results show that the surface roughness Ra is 90 nm-111 nm, which is expected to reduce further.

关 键 词：大面积金刚石膜 微波等离子体 等离子体后处理 电阻率 

分 类 号：TQ163.2[化学工程—高温制品工业]