采用氨化技术制备成簇生长的光滑线状氮化镓  

Smooth and Thread-shaped GaN Grown in Cluster by Ammoniating Technique

作　　者：孙莉莉[1] 薛成山[1] 孙传伟[2] 艾玉杰[1] 庄惠照[1] 王福学[1] 

机构地区：[1]山东师范大学半导体研究所,济南250014 [2]济南大学信息科学与工程学院,济南250022

出　　处：《微细加工技术》2007年第2期34-35,40,共3页Microfabrication Technology

基　　金：国家重大自然科学基金资助项目(9020102590301002)

摘　　要：通过在1 000℃时氨化Ga2O3/MgO/Si(111)薄膜15 min,制备出成簇生长的光滑的长直线状GaN。用X射线衍射(XRD)、扫描电子显微镜(SEM)和高分辨率电子显微镜(HRTEM)对样品进行测试分析。结果表明,线状GaN为六方纤锌矿结构单晶相,表面光滑,且成簇生长,直径在200 nm^400 nm左右,其长度可达5μm^20μm。Straight and smooth GaN threads were grown in cluster from some tiny holes when Ga2O3 film deposited on MgO/Si was ammoniated for 15 min in a environment of flowing ammonia atmosphere at 1000°C. The as-synthesized GaN threads were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM), respectively. The results demonstrate that these threads are single crystals with a hexagonal wurtzite structure and possess a smooth surface, and their average diameter ranges from 200 nm to 400 nm and their length changes from 5 μm to 20 μm.

关 键 词：GAN 磁控溅射 线状 

分 类 号：TN304[电子电信—物理电子学]