利用C_6H_8O_7/H_2O_2溶液对Al_xGa_(1-x)As/GaAs的选择性腐蚀制作空气腔结构的研究  

Study on Air Cavity Selectively Etched by Al_xGa_(1-x)As/GaAs with C_6H_8O_7/H_2O_2 Solution

作　　者：李文兵[1] 韩勤[1] 杨晓红[1] 杜云[1] 朱彬[1] 倪海乔[2] 

机构地区：[1]中国科学院半导体研究所光电子研发中心,北京100083 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《微细加工技术》2007年第6期57-61,共5页Microfabrication Technology

基　　金：国家自然科学基金资助项目(60376025);973国家重点基础研究发展计划资助项目(2006CB302802)

摘　　要：针对MEMS(micro-electro-mechanical system)工艺中牺牲层的选择性腐蚀问题,提出了一种判断牺牲层是否完全腐蚀的新方法,解决了这一工艺难点。测定了C6H8O7/H2O2溶液对GaAs的腐蚀速率,并采用这种方法选择性腐蚀了一个带有GaAs牺牲层的DBR(distributed bragg reflector)结构,得到一个空气腔结构,结合GaAs的晶体结构,分析了GaAs的各向异性腐蚀特性,为实际MEMS器件的制作奠定了基础。In order to solve the problem of selective etching of the sacrificial layer in the MEMS fabrication technique,a new way to judge whether the sacrificial layer is etched completely was pointed out.Meanwhile,the etching rate of GaAs with C6H8O7/H2O2 solution was measured;a DBR(distributed bragg reflector) structure with a GaAs sacrificial layer was selectively etched to make an air cavity,and its etching characteristic was analyzed with the crystal structure of GaAs,which was made a base for the real fabrication of a MEMS device.

关 键 词：选择性腐蚀 GaAs牺牲层 MEMS 

分 类 号：TN305[电子电信—物理电子学]