基于扫描电镜的电子束曝光机对准系统的研制  

Development of Alignment System of Electron Beam Lithography Based on SEM

作　　者：张今朝[1] 方光荣[1] 

机构地区：[1]中国科学院电工研究所,北京100080

出　　处：《微细加工技术》2006年第3期10-13,共4页Microfabrication Technology

摘　　要：介绍了基于扫描电镜的电子束曝光机对准系统的原理,详细分析了此系统的硬件设计、软件设计以及扫描场的校正过程。利用硬件获取扫描图像,并进行实时标记校正,利用软件进行标记位置识别和校正参数计算,满足了曝光机对准系统在性能和精度上的要求。在100μm扫描场下进行拼接曝光实验,达到了77.3 nm(2σ)的拼接精度。Alignment principle of the electron beam lithography based on SEM was introduced. The designs including hardware, software and adjustment procedure of scanning field were discussed. The hardware was applied to obtain image and accomplish real-time write-filed adjustment, and the software was applied to identify the mark position and calculate the adjustment parameters. All these designs can meet the requirements of the alignment system for both performance and accuracy. The result of exposure experiment under 100 μm write-field shows a stitch accuracy of 77.3 nm(2σ).

关 键 词：电子束曝光 扫描电镜 对准 

分 类 号：TN305.7[电子电信—物理电子学]