压电型微悬臂梁制备中RIE刻蚀硅工艺的研究  

Study on Reactive Ion Etching of Silicon in Fabrication Process of Piezoelectric Microcantilever

作　　者：董璐[1] 方华斌[1] 刘景全[1] 徐东[1] 徐峥谊[2] 蔡炳初[1] 

机构地区：[1]上海交通大学微纳科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200030 [2]Honeywell公司上海传感器实验室,上海200030

出　　处：《微细加工技术》2006年第5期47-50,54,共5页Microfabrication Technology

摘　　要：介绍了一种压电型微悬臂梁的制作工艺流程,重点研究了其中硅的反应离子刻蚀(RIE)工艺,分析了工艺参数对刻蚀速率、均匀性和选择比的影响,提出通过适当调整气体流量、射频功率和工作气压,以加快刻蚀速率,改善均匀性,提高选择比。研究表明,在SF6流量为20 mL/min,射频功率为20 W,工作气压为8.00 Pa的工艺条件下,硅刻蚀速率可以提高到401 nm/min,75 mm(3 in.)基片范围内的均匀性为±3.85%,硅和光刻胶的刻蚀选择比达到7.80。为制备压电悬臂梁或其它含功能薄膜的微结构提供了良好的参考。The process of a Si-based piezoelectric microcantilever was introduced. Especially, the technique of the reactive ion etching of silicon was studied emphatically. During etching of silicon, it was analyzed that the etching rate, uniformity and selectivity can be effectively improved by adjusting technological parameters properly, such as gas flow, RF power, working pressure, etc. The results indicate that the etching rate of Si can reach 401 nm/min and the non-uniformity on a 3 double prime wafer is controlled at ±3.85% when the flow of SF6 is 20 mL/min, RF power is 20 W and the work pressure is 8.00 Pa. The research lay a well foundation for the fabrication of piezoelectric microcantilevers or other microstructures with functional thin film.

关 键 词：压电型微悬臂梁 反应离子刻蚀 刻蚀速度 均匀性 选择比 

分 类 号：TN305.7[电子电信—物理电子学]