Si表面制备GaAs单晶薄膜的反相畴消除  

Elimination of Antiphase Domains from GaAs Layers Grown on Si Substrate

作　　者：刘翔[1] 吴长树[1] 张鹏翔[1] 赵德锐[1] 陈庭金[2] 廖仕坤[3] 杨家明[4] 

机构地区：[1]昆明理工大学,云南昆明650051 [2]云南师范大学,云南昆明650092 [3]昆明物理研究所,云南昆明650093 [4]昆明冶金研究院,云南昆明650051

出　　处：《半导体光电》2002年第1期63-65,共3页Semiconductor Optoelectronics

基　　金：云南省自然科学基金资助项目 (99E0 0 0 9Q)

摘　　要：极性半导体GaAs在非极性半导体Si表面外延生长 ,普遍选用 (10 0 )面Si材料作衬底 ,外延时由于Ga ,As原子占据不合适的晶格位置 ,通常导致结构缺陷———反相畴产生 ,而选用(10 0 )面偏向 [0 11]方向 4°或 (2 11)面的Si作衬底 。Epitaxial growth of polar semiconductors on nonpolar substrates often leads to structural defects known as antiphase domains (APDs) due to constituent atoms occupying improper sublattices. For GaAs on Si, (100) Si is usually used as a substrate, which will result in APDs. However, APDs can be eliminated effectively by using (211) Si or (100) Si with the deviation of 4° from\ as the substrate.

关 键 词：极性半导体 非极性半导体 反相畴 

分 类 号：TN304.054[电子电信—物理电子学]