选择外延MOVPE的表面迁移  

Surface Migration in Selectively Area Grown InGaAsP

作　　者：邱伟彬[1] 董杰[1] 周帆[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《半导体光电》2002年第3期212-214,共3页Semiconductor Optoelectronics

摘　　要：研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律 ,以及InGaAsP表面边缘尖角随Ⅴ /Ⅲ比的变化。结果表明 ,随着掩模宽度的增大 ,In组分增大 ,Ga组分减少 ;随着Ⅴ /Ⅲ比的增大 ,InGaAsP材料表面趋向平坦。对材料边缘尖角的变化规律作出了合理解释 ,研制出表面平坦的外延材料 。The variation of composition of group Ⅲ with mask width is investigated, as well as the variation of the surface spike of selectively grown InGaAsP by using LP MOVPE with Ⅴ/Ⅲ ratio. It is shown that the composition of In increases with the increase of the mask width, while that of Ga decreases. Spike was observed clearly at low Ⅴ/Ⅲ ratio, while no obvious spike was observed at high Ⅴ/Ⅲ ratio.

关 键 词：选择外延 边缘尖角 INGAASP Ⅴ/Ⅲ比 

分 类 号：TN304.054[电子电信—物理电子学]