4H-SiC肖特基二极管温度传感器模型分析  

Study on model of 4H-SiC Schottky diodes temperature sensor

作　　者：申君君[1] 王巍[1] 王玉青[1] 

机构地区：[1]重庆邮电大学,光电工程学院,重庆400065

出　　处：《重庆邮电大学学报（自然科学版）》2008年第z1期42-44,共3页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

基　　金：重庆市科委自然科学基金项目(CSTC2006BB2364)

摘　　要：在4H-SiC肖特基二极管正向电流热电子发射理论基础上,得出了理想因子、势垒高度及串联电阻随温度变化的特性值,并结合考虑三者随温度变化的特性提出了一种计算正向电流密度的理论模型通过对肖特基二极管的正向特性在300～500K的温度范围内的电流电压曲线模拟,表明温度升高对正向特性的影响比较显著,肖特基二极管适合于高温工作。Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes(SBD) under the forward bias,the influence of temperature on the ideality factor,Schottky barrier height and on-resistance are investigated. Theoretical current density,nodel is proposed by considering the temperature influence.Over a temperature range from 300K to 550K,the results show that the forward characteristic of the SBD change obviously,and the SBD is suitable for temperature sensor operating on high temperature.The resuhs also show that the thermionic emission theory is the dominant current transport mechanism.

关 键 词：4H-碳化硅 肖特基二极管 温度传感器 

分 类 号：TN911[电子电信—通信与信息系统]