VGF法GaAs单晶位错分布的数值模拟和Raman光谱研究  

Dislocation Distribution in VGF GaAs Single Crystal by Numerical Simulation and Raman Spectroscopy

作　　者：涂凡[1] 苏小平[1] 屠海令[1] 张峰燚[1] 丁国强[1] 王思爱[1] 

机构地区：[1]北京有色金属研究总院北京国晶辉红外光学科技公司,北京100088

出　　处：《稀有金属》2010年第2期237-242,共6页Chinese Journal of Rare Metals

基　　金：国家863项目(2002AAF3102)资助

摘　　要：采用数值模拟技术和Raman光谱法对4inch垂直梯度凝固(VGF)法GaAs单晶位错进行了研究。运用数值模拟软件计算了GaAs晶体生长过程中的位错分布,模拟计算与实验结果一致。通过Raman光谱测量,定量计算了晶片表面的残余应力分布。Raman测量结果表明,残余应力与位错密度分布基本一致。在VGF法生长的GaAs单晶中观察到了不完整的位错胞状结构,并利用Raman光谱法对其进行了微区分析。The numerical simulation and Raman spectroscopy were employed to study the dislocations in the VGF(Vertical Gradient Freeze)GaAs single crystal.Dislocation distribution was calculated and the numerical results were in good agreement with the experimental results.Raman spectroscopy was used to calculate the residual stress on the wafer quantitatively.The residual stress distribution was similar to the dislocation density distribution evaluated by KOH melt etching.The dislocation arrangement without completed...

关 键 词：数值模拟 GaAs 位错密度 残余应力 Raman光谱法 位错胞状结构 

分 类 号：O772[理学—晶体学]