Electrical characteristics of MOS capacitor using amorphous Gd_2O_3-doped HfO_2 insulator  

作　　者：季梅 王磊 熊玉华 杜军 

机构地区：[1]Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals

出　　处：《Journal of Rare Earths》2010年第3期396-398,共3页稀土学报（英文版）

基　　金：supported by the National Key Scientific Research Projects (50932001)

摘　　要：This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...

关 键 词：GD2O3 HIGH-K metal-oxide-semiconductor（MOS） rare earths 

分 类 号：O472.4[理学—半导体物理]