静态存储器单粒子翻转率预示的在轨验证  

Verification of predicted single event upset rate for commercial static random access memory(SRAM)

作　　者：张庆祥[1] 杨兆铭[2] 侯明东[3] 

机构地区：[1]中国空间技术研究院研究发展部,北京100094 [2]兰州物理研究所,兰州730000 [3]中国科学院近代物理研究所,兰州730000

出　　处：《航天器环境工程》2009年第6期506-509,497,共4页Spacecraft Environment Engineering

摘　　要：SRAM型FPGA配置区的单粒子翻转可能对系统的功能产生严重的影响,因此必须进行针对性的加固措施,而加固的重要依据之一是在轨翻转率结果。文章将地面获得的Hitachi 4Mb SRAM HI628512单粒子翻转率预示结果与搭载在极轨卫星SAC-C等上的飞行试验的结果进行了比较。分析表明基于国内地面试验数据和FOM方法预示的在轨翻转率与国外的在轨监测数据接近,多位翻转的试验结果也得到了在轨试验数据的验证。这些结果表明我国在单粒子翻转的模拟试验技术和在轨翻转率预示方面取得了相当的进展,可以为卫星电子系统抗辐射加固设计提供有力的保障。SRAM based field-programmable gate array(FPGA) is widely used in the space system in recent years.But single-event upsets(SEUs) can damage the programmable logic and routing and lead to the failure of the entire device.SEU rate is an important parameter to be considered in the radiation hardening design of SRAM based FPGA.In this paper,the predicted SEU rate of Hitachi 4Mb SRAM—M628512 is compared with that observed on the Advanced Components Experiment on the SAC-C polar orbit satellite.It is shown that the predicted SEU rate based on the domestic experimental data and the method of figure of merit(FOM) is close to that observed in orbit.The studies on the single event effect experiment techniques and the orbital rate prediction provide support to the radiation hardening design of spacecraft electronic system in China.

关 键 词：静态存储器 单粒子翻转 多位翻转 fom方法 在轨监测 

分 类 号：TN492.6[电子电信—微电子学与固体电子学] V417+.7[航空宇航科学与技术—航空宇航推进理论与工程]