SOI SONOS EEPROM管电离总剂量辐射效应  

Total dose radiation response of SOI SONOS EEPROM transistors

作　　者：陈正才[1] 徐大为[1] 肖志强[1] 高向东[1] 洪根深[1] 徐静[1] 周淼[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《信息与电子工程》2012年第5期613-615,共3页information and electronic engineering

摘　　要：采用0.6μm SOI SONOS工艺技术平台研制了0.6μm SOI SONOS EEPROM管,分析其擦写特性。辐射前,SONOS EEPROM管的阈值窗口电压为5.04 V。利用Co-60γ源研究存储管的电离总剂量辐射特性,给出了SONOS EEPROM管擦除态、编程态的Id-Vg曲线及阈值窗口随辐射总剂量的变化关系,在辐射总剂量达到500 Krad(Si)时,EEPROM管仍有0.7 V的阈值窗口,可以实现存储电路的设计,并对总剂量辐射引起存储管阈值漂移的机理进行了探讨。0.6 μm SOI SONOS EEPROM transistors were fabricated with 0.6 μm SOI SONOS process,and their current-voltage characteristics both programmed and erased were discussed.The threshold window voltage was 5.04 V before radiation.Then these EEPROM transistors were radiated with Co-60 γ-ray at various radiation levels.It was showed that the EEPROM still had a threshold window of 0.7 V when the total dose reached 500 Krad(Si),satisfying the requirement of the memory circuit.The mechanism of the threshold shift due to total dose radiation was analyzed.

关 键 词：SONOS EEPROM器件 电离总剂量辐射 绝缘体上硅 

分 类 号：TN386[电子电信—物理电子学]