射频溅射工艺参数对AZO薄膜结构和性能的影响  

Influence of RF sputtering parameter on the structural and electrical properties of AZO thin film

作　　者：黄稳[1] 余洲[1] 刘连[1] 张勇[1] 黄涛[1] 闫勇[1] 赵勇[1,2] 

机构地区：[1]西南交通大学超导研究开发中心材料先进技术教育部重点实验室,四川成都610031 [2]新南威尔士大学材料科学与工程学院

出　　处：《功能材料》2012年第12期1553-1555,1560,共4页Journal of Functional Materials

基　　金：中央高校基本科研业务费专项资金资助项目(SWJTU09BR155;SWJTU09ZT24);国际自然科学基金资助项目(50588201;50872116);国家高技术研究发展计划(863计划)资助项目(2007AA03Z203);高等学校博士点专项科研基金资助项目(SRFDP200806130023);长江学者与创新团队计划资助项目(IRT0751)

摘　　要：采用射频磁控溅射法制备了掺铝氧化锌(AZO)薄膜,研究了衬底温度及溅射工作压强对沉积薄膜的晶体结构、表面形貌及电学性能的影响。结果显示,随衬底温度增加,薄膜的结晶结构发生显著变化,而溅射工作气压增加主要影响沉积薄膜(103)面与(002)面的相对强度。薄膜的表面形貌受温度影响严重,而气压对形貌的影响相对较小。衬底温度增加,薄膜的电阻率急剧降低,迁移率和载流子浓度都显著增加,而工作气压增加则导致电阻率先减小后增大。Aluminum doped zinc oxide(AZO) films had been deposited by RF(radio frequency) magnetron sputtering technique.Effect of sputtering parameters(substrate temperature and argon gas pressure) on the structural,surface topography and electrical properties of the deposited films had been studied.Crystalline structure of the deposited films changed significantly with increasing substrate temperature,while argon gas pressure prominently effected the(103) and(002) diffraction intensity ratio.Temperature influenced surface topography seriously,while argon gas pressure did not.As substrate temperature was increased,thin film resistivities decreased sharply and carrier concentration and hall mobility increased prominently.Film resistivities decreased with increasing argon gas pressure,and then increased.

关 键 词：AZO薄膜 晶体结构 电学性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]