晶硅太阳电池氮化硅膜产生色差的影响因素研究  

The Inluence Factors Causing Color diference of Silicon Nitride Film of Crystalline Silicon Solar Cell

作　　者：涂宏波[1] 马超[1] 王学林[1] 谢斌[1] 高林[2] 

机构地区：[1]浙江晶科能源有限公司,浙江海宁314416 [2]长江大学化学与环境工程学院,湖北荆州434023

出　　处：《化工中间体》2013年第5期37-41,共5页

摘　　要：采用管式PECVD的方法对硅片进行氮化硅镀膜,通过分析PECVD镀膜原理,探索了硅片表面均一性、卡点的导电导热性、反应温度的均匀性以及电场均匀性对氮化硅膜色差的影响。结论表明,硅片表面微观结构差异较大会造成比表面积明显差异,从而使氮化硅薄膜厚度产生显著差异,表现出不同颜色。当导电导热性、反应温度的均匀性以及电场均匀性较差时,气体的反应速率差异较大,同一硅片不同区域的氮化硅膜层生长速率不同,膜层厚度也不同,即容易产生色差片。Coatingsilicon nitride on silicon wafers usingthe technique of tubular PECVD andanalyzing the principle of PECVD coating technique to searchthe silicon wafer surface uniformity,the conductive thermal conductivity ofsupporting point , the uniformity of temperature and the uniformity ofelectric field influence on colordifference of silicon nitride film.Theresults show thatthe big different microstructure of the silicon surface leads to obvious difference of the specific surface area, so that the thickness of silicon nitride film has a significant difference and show some different colors. When the uniformity of conductive thermal conductivity, temperature and electric field are poor, the difference of reaction rate of gas is big.So, the growth rate of silicon nitride film of the different areas on the same silicon waferis different and the membrane thickness is diferent, which is easy to produce colordiference silicon wafer.

关 键 词：太阳电池 氮化硅 色差 石墨舟 

分 类 号：TM914.41[电气工程—电力电子与电力传动]