高性能多晶硅压力传感器的研制  

Development of Polysilicon Pressure Sensor with High Performance

作　　者：朱秀文[1] 侯曾燏 米健[1] 

机构地区：[1]天津大学电子工程系

出　　处：《传感技术学报》1993年第1期1-6,共6页Chinese Journal of Sensors and Actuators

摘　　要：本文介绍的高性能多晶硅压力传感器,以重掺杂的LPCVD多晶硅薄膜作应变敏感电阻,用二氧化硅层隔离单晶硅衬底,使其工作温度高达200℃以上,若用恒流源供应惠斯登电桥,即使在没有外电路补偿情况下,灵敏度系数(TDS)也仅1.32×10^(-6)FS/℃,可实现近乎理想的灵敏度温度补偿.Presented in this paper is a polysilicon pressure sensor with high performence. Its strain sensitive resistors are LPCVD polysilicon films. The polysilicon piezoresistors are insulated by a SiO2 layer, so that the operating temperature range of the sensor can be over 200℃. In particular, heavily boron-doped polysilicon resistors show a TCR of +1000 ×10-6/K and a TCK of -1000 ×10-6/K. Using a constant current supply for a wheatstone bridge, a TCS of about 10-6F S/℃ was obtained. A nearly complete temperature compensation of sensitivity can be realized. Experimental results show that TCS=1.32 ×10-6 FS/℃ without any external compensation network.

关 键 词：多晶硅 压力传感器 温度系数 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]