Mn掺杂对ZnO∶Mn薄膜结构特性的影响  

Influence of Mn-doping on The Structure Properties of ZnO∶Mn Thin Films

作　　者：李彤[1] 介琼[1] 张宇[1] 倪晓昌[1] 赵新为[1,2] 

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222 [2]东京理科大学物理系

出　　处：《发光学报》2013年第9期1167-1172,共6页Chinese Journal of Luminescence

基　　金：天津市教委项目(20120710;20110711)资助

摘　　要：利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列不同Mn掺杂的ZnO∶Mn薄膜。结合Raman光谱,XRD谱和SEM分析了ZnO∶Mn薄膜的结构特性。Raman拟合结果显示,在Mn摩尔分数从0增加到5.6%的过程中,ZnO∶Mn薄膜始终保持着六角纤锌矿结构;随着Mn掺杂浓度的增大,437 cm-1和527 cm-1位置上的Raman散射峰出现红移现象,说明Mn掺杂量的增加导致晶格更加无序,缺陷增多;当Mn摩尔分数达到15.8%时,647 cm-1处的Raman散射峰出现,暗示了MnO的产生,同时薄膜结晶质量变差。这一结论也得到了XRD和SEM结果的支持。ZnO∶ Mn thin films with different Mn concentration were prepared on glass substrates at room temperature using RF magnetron sputtering method.Raman spectroscopy,X-ray diffraction spectra and SEM were used to analyze the structural characteristics of the ZnO∶ Mn films.The results show that ZnO∶ Mn thin films have significant wurtzite structure with Mn doping mole fraction from 0 up to 5.6%.The redshift of Raman peaks at 437 cm-1and 527 cm-1can be explained by the lattice defects and disorder induced by the increasing of Mn concentration.The appearance of Raman spectra at 647 cm-1indicates the formation of MnO,leading to the worse crystallization of ZnO∶ Mn films,which is also evidenced by XRD and SEM results.

关 键 词：ZNO MN 拉曼 稀磁半导体 

分 类 号：O482.31[理学—固体物理]