碳硅共掺杂p型AlN的光电性能研究  

Photoelectrical Performance of p-type AlN Crystal Codoped by Si and C

作　　者：武红磊[1] 郑瑞生[1] 李萌萌[1] 闫征[1] 郑伟[1] 

机构地区：[1]深圳大学光电工程学院光电子器件与系统(教育部/广东省)重点实验室,广东深圳518060

出　　处：《发光学报》2013年第9期1199-1202,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金重点项目(61136001);国家"973"前期研究专项(2010CB635115)资助项目

摘　　要：在SiC衬底上生长了碳硅共掺杂p型AlN晶体,通过X射线衍射、X射线光电子能谱(XPS)、光致发光(PL)光谱、霍尔测试对碳硅共掺杂p型AlN晶体的结构、光学及电学性能进行了综合研究。通过XPS测试分析(尤其是对样品中Si 2p和C 1s的XPS谱分析)发现,样品中C替代N成为受主,而Si替代Al成为施主。样品的PL谱主要包括两个特征发射峰,分别来自于C、Si在AlN中形成的复合物V N-C N和C N-Si Al。p-type AlN crystals by C and Si codoping were grown on SiC substrates by the sublimation method.The structural,optical and electronic properties of the samples were investigated by XRD,XPS,PL and Hall-effect measurement.The XPS analysis,especially about binding energies of Si 2p and C 1s peaks,reveals that in AlN crystals,C replaces N as an accepter and Si replaces Al as a donor.In PL spectroscopy,two main emission peaks are observed.Combined the structure and composition of AlN and related theoretical results,the two peaks are attributed to the complexes of V N-C N and C N-Si Al,respectively.

关 键 词：光致发光 掺杂 p型导电 半导体材料 ALN 

分 类 号：O482.31[理学—固体物理]