Advances in organic field-effect transistors and integrated circuits  

作　　者：WANG Hong JI ZhuoYu LIU Ming SHANG LiWei LIU Ge LIU XingHua LIU Jiang PENG YingQuan 

机构地区：[1]Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]School of Physics Science and Technology,Lanzhou University,Lanzhou 730000,China

出　　处：《Science China(Technological Sciences)》2009年第11期3105-3116,共12页中国科学（技术科学英文版）

基　　金：Supported by the National Basic Research Program of China ("973" Project) (Grant Nos. 2006CB806204, 2009CB939703);the National Natural Science Foundation of China (Grant Nos. 90607022, 60676001, 60676008, 60825403)

摘　　要：Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.Organic field-effect transistors (OFETs) have received significant research interest because of their promising applications in low cast, lager area, plastic circuits, and tremendous progress has been made in materials, device performance, OFETs based circuits in recent years. In this article we introduce the advances in organic semiconductor materials, OFETs based integrating techniques, and in particular highlight the recent progress. Finally, the prospects and problems of OFETs are discussed.

关 键 词：ORGANIC FIELD-EFFECT TRANSISTORS INTEGRATED CIRCUITS simulation of CIRCUITS 

分 类 号：TN386[电子电信—物理电子学]