CMP加工过程中加工载荷对液膜厚度的影响分析  

Effect of Polishing Load on Slurry Film Thickness in Chemical Mechanical Polishing

作　　者：郁炜[1] 吕迅[2] 楼飞燕[2] 

机构地区：[1]浙江工业大学浙西分校信息与电子系,浙江衢州324000 [2]浙江工业大学机械制造及自动化教育部重点实验室,杭州310032

出　　处：《航空精密制造技术》2009年第1期17-19,共3页Aviation Precision Manufacturing Technology

摘　　要：本文采用激光诱导荧光技术(LIF)来研究抛光参数对化学机械抛光加工区液膜厚度的影响。研究表明,抛光液膜厚度随着抛光载荷的增加而减少,减小的趋势随抛光载荷的提高而减缓。同时液膜厚度随着抛光速度的增加而变大。通过抛光参数的变化对抛光液液膜厚度影响的分析,为改善CMP加工工艺提供理论性的依据。Laser inducement fluorescence (LIF) is used to study the effect of polishing parameters on slurry film thickness. The study indicates that the slurry layer decreases with increasing polishing load and increases with increasing polishing speed. However, the current is slow down with the increase polishing load. By analyzing the effects of CMP process parameters involving load and speed on slurry film, the CMP process is controllable in theoretical principle.

关 键 词：化学机械抛光 液膜厚度 抛光载荷 激光诱导荧光 

分 类 号：TN405[电子电信—微电子学与固体电子学]