a面GaN阴极荧光激发强度特性的研究  

Characteristic of Cathodoluminescence Excition Density for a-Plane GaN

作　　者：崔影超[1] 谢自力[1] 赵红[1] 李弋[1] 刘斌[1] 宋黎红[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学江苏省光电信息功能材料重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期167-170,共4页Semiconductor Technology

基　　金：国家"973"重点基础研究项目(2006CB6049);国家"863"高技术研究发展计划(2006AA03A103;2006AA03A118;2006AA03Z411);国家自然科学基金(60721063;60676057;60731160628);江苏省创新学者攀登项目(BK2008019)

摘　　要：对MOCVD生长的r-Al2O3上的a面GaN薄膜采取了两种方式的室温阴极荧光的测试,即固定电子束加速电压改变电子束流和固定电子束流改变加速电压。结果显示,非极性a面GaN的带边和黄带的CL强度均与电子束流呈亚线性关系,其中IBE∝I0B.46,IYL∝I0B.45,这主要是由于饱和效应引起的,与以往c面GaN报道对比,表明带边相对于黄光受到了一定抑制;改变加速电压可以看出,黄带部分随加速电压的变化关系相对于带边要复杂很多,这主要是由黄带本身形成原因的复杂多样性与自吸收、自由载流子和应力的综合作用引起的。The a-plane GaN films grown on the substrate of r-Al2O3 were studied by room temperature cathodoluminescence.Results show that both intensity of band edge(BE)luminescence peak and yellow luminescence(YL)peak sublinearly depend on the excition density of electron beam,which is attributed to saturation effect.Compared to previous data reported for c plane GaN,the luminescence of BE,relative to YL,is limited.Then we fix beam current and change acceleration voltage and find that the relationship between YL peak position and acceleration voltage is more complex than BE and acceleration voltage.This is due to the comprehesive effect of the origin of YL,which is various natively,self absorption,free carrier and stress.

关 键 词：a面GaN 阴极荧光 激发强度 

分 类 号：TN304.23[电子电信—物理电子学]