In_(0.2)Ga_(0.8)N化合物肖特基太阳电池  

In_(0.2)Ga_(0.8)N Schottky Solar Cell

作　　者：薛俊俊[1] 赵红[1] 陈敦军[1] 谢自力[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期213-215,230,共4页Semiconductor Technology

基　　金：国家863项目(2007AA06A405);教育部NCET项目(NCET-05-0445);江苏省自然科学基金资助项目(BK2006126)

摘　　要：制备了一个Au/Pt/In0.2Ga0.8N肖特基原型太阳电池。采用热电子发射(TE)模型和热电子场发射(TFE)模型拟合了肖特基的正向I-V曲线,结果显示两种模型计算所得到的肖特基势垒高度和理想因子非常相近,表明所制备的In0.2Ga0.8N肖特基的电流输运机制主要体现为热电子发射。当采用功率密度为300mW/cm2的氙灯照射时,In0.2Ga0.8N肖特基太阳电池呈现出的开路电压为0.91V,短路电流密度为7mA/cm2,填充因子为0.45,功率转换效率为0.95%。A patterned Au/Pt/In0.2Ga0.8N Schottky prototype solar cell was fabricated.By fitting a linear curve to the forward current-voltage(I-V)characteristics using the TE model or the TFE model,There exist only small differences in the SBHs and the ideality factors obtained from the TE and TFE models,respectively.Those indicate that the thermionic emission is a dominating current transport mechanism at the Pt/InGaN interface in our fabricated Schottky solar cell.The Au/Pt/In0.2Ga0.8N Schottky solar cell has a very low dark current density,an open-circult voltage of 0.91 V,a short-circuit current density of 7 mA/cm2,a fill factor of 0.45,and a power conversion efficiency of 0.95% when illuminated by a Xe lamp with the light intensity of 300 mW/cm2.

关 键 词：氮化铟镓 化合物半导体 肖特基 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]