4H-SiC MESFET工艺中的金属掩膜研究  

Study of Metal Mask in 4H-SiC MESFET Process

作　　者：陈刚[1] 李哲洋[1] 陈征[1] 冯忠[1] 陈雪兰[1] 柏松[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,210016

出　　处：《半导体技术》2008年第S1期241-243,共3页Semiconductor Technology

摘　　要：在4H-SiC MESFET微波功率器件制造技术中干法刻蚀是一个很重要的工艺,而对SiC外延片的RIE、ICP等干法刻蚀来说,有光刻胶、Ni、Al和NiSi化合物等多种掩膜方法,其中用光刻胶做掩膜时刻蚀形成的台阶角度缓,不垂直,而Ni、Al等金属掩膜在干法刻蚀后易形成接近垂直的台阶。通过对Ni、Al、NiSi化合物等多种金属掩膜的研究,得到了干法刻蚀台阶垂直且表面状况良好的Ni金属掩膜条件,最终成功制备出9mm SiC MESFET微波功率器件,在2GHz脉冲输出功率超过38W,功率增益9dB。The etch for fabrication of the 4H-SiC MESFETs is an important process.There are several methods to make masks for ICP or RIE etch,such as photoresist,Ni,Al and NiSi compound.In order to get the vertical step,was introduced Ni,Al are chosen as the metal mask.The latest work on Ni,Al,NiSi compound metal mask was introduced for fabrication of 4H-SiC MESFETs using the SiC epitaxial wafer grown at Nanjing Electronic Devices Institute.The device process was designed to fabricate n-channel 4H-SiC MESFETs with 9 mm total gate periphery.The RF characteristics was studied.At 2 GHz,the pulse output power is measured to be 38 W with power gain of 9 dB.

关 键 词：4H碳化硅 金属掩膜 金属-肖特基势垒FET 

分 类 号：TN386[电子电信—物理电子学]