气相掺杂FZ单晶电阻率的控制  

Controlling Method of Resistivity in Gas Diffusing-FZ Single Crystal

作　　者：刘洪飞[1] 刘燕[1] 董军恒[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2008年第S1期287-289,293,共4页Semiconductor Technology

摘　　要：主要介绍了用气相掺杂的方法制备FZ单晶的基本技术条件和设计思路。采用此技术可使气相掺杂时既快速准确地实现目标电阻率。对单晶的轴向及径向电阻率均匀性进行调整,提高了气相掺杂FZ硅单晶的成品率。The essential technique condition and design method of GD-FZ single crystal were described,and by this technique,the aiming-resistivity can be achieved expeditiously and exactly.The diversification of resistivity along axis direction and radial direction can be adjusted,and the finished product percent of GD-FZ single crystal can be advanced.

关 键 词：气相掺杂 电阻率 区熔单晶 

分 类 号：O738[理学—晶体学]