高阻ZnO单晶的热激发光、热激电流及热电效应谱测量  

Measurements of High Resistivity ZnO by TL,TSC and TEES

作　　者：李成基[1] 李弋洋[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《半导体技术》2008年第S1期304-307,共4页Semiconductor Technology

摘　　要：对水热法生长的高阻ZnO单晶在进行热激电流(TSC)和热电效应谱(TEES)测量的同时,也进行了的热激发光(TL)的测量。在80～400K的温度范围内,测出多达13个深能级,热激电流所测的深能级大部分为空穴陷阱。热激电流与热激发光的温度谱有很大差别,呈互补行为,可能是非平衡载流子在不同的温度下其寿命不同所致。The deep levels of hydrothermally grown ZnO single crystal by thermoluminescence(TL),thermally stimulated current(TSC)and thermoelectric effect spectroscopy(TEES)were measured.There were 13 levels found at 80 to 400 K.Most of them are hole traps.The TSC and TL are quite difference.Two of them exhibit complement behave each other.It is possible due to the different lifetime at different temperatures.

关 键 词：ZnO 热激发光 热激电流 热电效应谱 深能级 

分 类 号：O472.4[理学—半导体物理]