稀磁半导体TiMnO_2分子束外延生长和磁学性质  

Molecular Beam Epitaxy and Ferromagnetism of Diluted Magnetic Semiconductor TiMn

作　　者：李树玮[1] 李新宇[1] 吴曙翔[1] 许灵敏[1] 刘雅晶[1] 邢祥军[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,广州510275

出　　处：《半导体技术》2008年第S1期379-382,共4页Semiconductor Technology

基　　金：国家自然科学基金(50572124)

摘　　要：用分子束外延生长的Mn掺杂的宽带半导体TiO2薄膜研究了结晶质量与磁性质的关系。以慢速率生长的外延薄膜具有好的晶体结构,而以快速率生长的外延薄膜具有很多空位。X射线光电子能谱显示Mn2+与缺陷之间存在相互作用。与具有缺陷的Mn∶TiO2薄膜不同的是,具有好的结晶质量的Mn∶TiO2薄膜没有磁性,这说明室温稀磁性质与材料的结构缺陷具有很大的联系。The relation between crystal quality and ferromagnetism is investigated through Mn-doped TiO2 grown by molecular beam epitaxy(MBE).The epitaxial TiO2 thin films grown slowly are of fine crystal structure,while there are many vacancies in the TiO2 thin films grown quickly.X-ray photoelectron(XPS)shows that the Mn2+ and defect interact on each other.The Mn:TiO2 thin films with high crystal quality don't demonstrate any ferromagnetism,which is different from the Mn:TiO2 thin films with defects.The result indicates that there is a close correlation between room temperature diluted ferromagnetism and material structure defects.

关 键 词：稀磁半导体TiMnO2 分子束外延 室温铁磁性 

分 类 号：TN304.7[电子电信—物理电子学]