掺碳锗硅合金的制备及其性能研究进展  

Recent advances in research and development on preparation and properties of SiGeC alloys

作　　者：亓震[1] 叶志镇[1] 黄靖云[1] 卢焕明[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《半导体光电》1999年第3期154-158,共5页Semiconductor Optoelectronics

摘　　要：近几年来 Ｓｉ Ｇｅ Ｃ 三元合金受到人们的广泛关注，日益成为研究的热点之一。碳的加入为 Ｓｉ－ Ｇｅ 系统在能带和应变工程上提供了更大的灵活性。处于替代位置的碳能缓解 Ｓｉ Ｇｅ 合金的应变，并调节其能带。总结了碳的加入对锗硅材料中应变的缓解及碳对合金能带结构的影响，尤其是对弛豫状态下的锗硅材料及锗硅碳材料的调节作用。SiGeC alloys have attracted considerable attention over the past few years.The incorporation of carbon into Si-Ge system provides an additional degree of freedom for band gap and strain engineering.It can make the strain of SiGe relaxed and adjust the band gap as well.In this paper,the strain compensation of SiGe alloys, and the addition of carbon and its influence on the band structure,especially on relaxed SiGeC alloys and SiGe alloys, are summarized,along with discussion of their mechanism.

关 键 词：半导体材料 SiGeC合金 能带结构 应变弛豫 价带补偿 荧光光谱 

分 类 号：TN3[电子电信—物理电子学] TN201