激光增进的半导体异质结外延生长  

Laser-enhanced epitaxial growth of semiconductor heterostructure

作　　者：李代宗[1] 余金中[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《半导体光电》1999年第1期1-6,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：文章阐述了光辅助外延生长的基本原理，光辐射增强生长速率主要有：光分解、光催化和光的热分解三种机制；介绍其在半导体材料外延生长中的具体应用，包括降低温度、掺杂控制、原子层外延和选择性外延；分析了实验中光的作用以及对材料晶体质量和光电特性的影响，为生长高质量材料提供实验基础。The fundamentals of photoassisted epitaxy are reviewed.There are mainly three sorts of mechanism for the enhancement of the growth rate by light radiation,i.e.,photolysis,photocatalysis and light induced pyrolysis. The applications of the photoassisted epitaxy in the epitaxial growth of semiconductors are introduced, such as temperature decrease,doping control,atomic layer epitaxy and the selective epitaxy. The effect of light on both the crystal quality and the opto-electrical properties of materials is analyzed so as to provide experimental base for growing high-quality materials.

关 键 词：半导体薄膜 化学汽相淀积 脉冲激光淀积 光催化 光分解 

分 类 号：TN304.054[电子电信—物理电子学]