基于载流子双极输运的二极管电流模型  

p-n junction current model based on the carrier ambipolar transportation

作　　者：朱延超[1] 杨建红[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《兰州大学学报（自然科学版）》2013年第6期833-837,共5页Journal of Lanzhou University(Natural Sciences)

摘　　要：讨论在考虑过剩多子、双极漂移、双极扩散以及丹倍电场作用下p-n结载流子的输运问题.采用不同于传统肖克莱理论的方法,从过剩多子角度入手,以长基区p+-n结的n型准中性区为例,研究了其中的载流子输运.在考虑双极扩散和双极漂移过程后,指出因双极扩散而产生的丹倍电场在调节载流子输运中的重要作用,并用实验测量、理论分析和数值模拟方法对双极输运和丹倍电场与过剩多子之间的关系加以验证.指出在一个扩散长度内多子电子的漂移电流受到丹倍电场强有力的调节作用.提出了考虑丹倍电场后的漂移电流以及另外三种电流分量和总电流模型,其结果和数值模拟相符,这一模型有助于更加全面准确地理解半导体p-n结理论.The carrier transport characteristics of p-n junction were discussed in the consideration of excess majority bipolar drift, ambipolar diffusion and the effect of Dember field. A method different from the traditional Shockley theory was used, with a long based p+-n junction as an example, to study the carrier transportation. In view of the bipolar drift and ambipolar diffusion, the significant role of Dember field in modulating the carrier transport was indicated. The relation of ambipolar transport, Dember field and excess majority carrier was testified by experimental measurement, analysis and numerical simulation. Within a diffusion length the majority-electron drift current was enhanced dramatically by Dember field. The analytical model of majority-electron current and total current was proposed and it showed an admirable agreement with the numerical simulation. The analytical model provides a more comprehensive and more accurate understanding of the current character and helps to better comprehend the p-n junction theory.

关 键 词：P-N结 过剩多子 双极输运 丹倍电场 多子漂移电流 

分 类 号：O475[理学—半导体物理]