宽带高增益双层硅基MEMS微带天线阵列(英文)  

MEMS patch antenna array with broadb and and high-gain on double-layer silicon wafers

作　　者：杨柳风[1] 王婷[1] 

机构地区：[1]北京理工大学机电学院,机电工程与控制国家级重点实验室,北京100081

出　　处：《强激光与粒子束》2015年第2期155-159,共5页High Power Laser and Particle Beams

基　　金：supported by Beijing Higher Education Young Elite Teacher Project(YETP1203)

摘　　要：针对传统微带天线带宽窄和增益低等问题,设计了一种易与射频(RF)前端集成的硅基微带天线。该天线设计结合MEMS工艺,将高阻硅和低阻硅通过键合工艺形成双层硅基底,来改善微带天线介质基板的等效介电常数,有效增大了天线的带宽。同时通过在地面引入缺陷地结构(DGS),有效的抑制谐波的产生。在此基础上设计了中心频率为10 Hz,2×2天线辐射阵列。仿真结果表明,天线相对阻抗带宽达到15.9%,增益超过10.9dB,比传统微带天线有明显提升,同时满足引信中天线抗干扰的要求。A MEMS patch antenna which can be integrated with RF module easily was designed to improve the bandwidth and gain of the traditional microstrip antenna.The equivalent dielectric constant of substrate of the microstrip antenna was optimized to greatly increase the bandwidth of the antenna by a high resistivity silicon being bonded to a low resistivity silicon to form a double-layer silicon substrate under the MEMS technology.Defected ground structure was also used on ground plane in order to restrain the harmonic radiation of antenna.Based on the above aspects,a 2×2antenna array was designed with a center frequency of 10 GHz.The simulation results show that the antenna array has an impendence bandwidth of 15.9% and a gain of 10.9dB,significantly better than traditional antennas and meets the anti-interference requirements of antennas in the fuze.

关 键 词：微带天线 MEMS 硅 缺陷地 抗干扰 

分 类 号：TN822[电子电信—信息与通信工程]