离子源预处理工艺对WC基底表面及Ta缓冲涂层的影响  

Influence of ion source pretreatment on WC substrate surface and Ta buffer coating

作　　者：魏俊俊[1] 朱小研 陈良贤[1] 刘金龙[1] 黑立富[1] 李成明[1] 张勇[2] 

机构地区：[1]北京科技大学新材料技术研究院,北京100083 [2]中国科学院力学研究所,北京100190

出　　处：《材料热处理学报》2015年第6期164-168,共5页Transactions of Materials and Heat Treatment

基　　金：国家自然科学基金(51272024);中央高校基本科研业务费(FRF-TP-14-094A2)

摘　　要：研究了阳极层离子源预处理工艺对WC硬质合金基底表面粗糙度Ra和表面最大峰谷值Pv的影响,以及对后续镀制Ta缓冲涂层表面特征及膜基附着力的影响。结果表明,硬质合金基片表面粗糙度和表面最大峰谷值的增加量随基片偏压升高呈指数增加;而离子源电压对基片表面粗糙度和表面最大峰谷值影响较弱;采用离子源电压1350 V,基片偏压200 V轰击硬质合金基片15 min后镀制Ta膜,膜层表面晶粒细小均匀,表面致密性显著增加;此外,基片表面经离子源处理后,镀制的Ta缓冲层与基底的膜基结合力有较大改善,这将有利于提高后续贵金属保护涂层的附着力及抗元素扩散能力。The effect of parameters of ion source on roughness( Ra) and peak-valley( Pv) of tungsten carbide( WC) substrate were investigated. Ta coating surface characterization and the adhesion between substrate and coating were evaluated. The results show that added value of Raand Pvof WC( Co-12 at%) substrate simultaneously increase exponentially with the increase of substrate bias. In contrast,the effect of ion source voltage on the Raand Pvis not obvious. When the substrate is treated by ion source with the voltage of1350 V and substrate bias voltage of 200 V for 15 min,the deposited Ta coating displayed a uniform and compact microstructure feature.Moreover,the adhesion between the buffer coating( Ta) and the substrate is improved significantly after the ion source pretreatment of the substrate,and will be beneficial to depositing the next protective coating,such as precious metal alloy films.

关 键 词：离子源预处理 结合力 表面粗糙度 表面最大峰谷值 

分 类 号：TQ171.734[化学工程—玻璃工业] TB306[化学工程—硅酸盐工业]