磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究  

Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering

作　　者：曹明杰[1] 赵明[1] 庄大明[1] 郭力[1] 欧阳良琦 李晓龙[1] 宋军[1] 

机构地区：[1]先进成形制造教育部重点实验室清华大学材料学院,北京100084

出　　处：《材料研究学报》2015年第1期51-54,共4页Chinese Journal of Materials Research

摘　　要：采用中频交流磁控溅射法制备非晶铟镓锌氧化物(IGZO)薄膜,用XRD、XRF、Hall测试等手段进行表征,研究了溅射电流、氧气流量等工艺参数对其电学性能的影响。结果表明,制备出的IGZO薄膜均为非晶结构,成分与靶材基本一致,电学性能对溅射电流不敏感,而氧气流量的改变可显著影响薄膜的载流子浓度和Hall迁移率。随着氧气流量的增加,薄膜的载流子浓度先增加后减小,而Hall迁移率随着载流子浓度的提高而增加。透过率随着氧气流量的增大先提高然后稳定在90%以上。Amorphous indium- gallium- zinc oxide(a- IGZO) thin films were fabricated using mid- frequency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The influence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal to that of the target. The change of sputtering current had no significant effect on the electronic properties. But the carrier concentration of the samples exhibited an obvious change as the increase of the O2 flow rate, which slightly increased and then rapidly decreased.The samples with higher carrier concentration exhibited larger Hall mobility. The average transmission of the IGZO thin films deposited with large O2 flow rate is above 90%.

关 键 词：无机非金属材料 IGZO薄膜 非晶态半导体 磁控溅射 迁移率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]