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作 者:于春青[1] 范隆[1] 岳素格[1] 陈茂鑫[1] 郑宏超[1]
出 处:《微电子学与计算机》2015年第6期171-175,共5页Microelectronics & Computer
摘 要:为了更好地设置不同错误率预估模型的参数以及为抗辐射加固设计提供指导,以微处理器为例,针对敏感体深度这一参数进行了探测.利用脉冲激光局域辐照以及聚焦深度可调的优势对180nm体硅CMOS工艺的32位微处理器的缓存(cache)区域、寄存器堆(regfile)区域以及组合逻辑区域进行了敏感体深度的探测,结果表明,在同一工艺下的不同功能敏感区域内,其敏感体深度基本一致,均为1μm左右.这一方法能够准确、方便、快速地获取器件的敏感参数,为更好地对器件进行错误率预估提供参考.In order to provide guidance for parameter settings in different error rate predicting models and for antiirradiation hardened design,a 32-bit microprocessor is selected as our target circuit,and the sensitive depth of circuit is investigated.Utilizing the regional radiation of laser pulses and the adjustability of laser focus panel,we obtain the sensitive depth of cache areas,regfile areas and the combinational logic areas which are fabricated in 180 nm CMOS technology.Results show that the sensitive depth of the different sensitive areas in one device is almost the same whose value is about 1μm.Sensitive parameters of the device can be obtained by this approach accurately,conveniently and fast which provide a strong reference to the device for better estimation of the error rate.
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