PMMA的反应离子深刻蚀  

Deep Reactive Ion Etching of Polymethylmethacrylate

作　　者：张丛春[1] 杨春生[1] 丁桂甫[1] 黄龙旺[1] 

机构地区：[1]薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳米科学技术研究院,上海200030

出　　处：《真空科学与技术学报》2004年第2期157-160,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金 (No .5 0 0 75 0 5 5 )

摘　　要：对PMMA进行反应离子深刻蚀以获得高深度比微结构。研究了纯氧刻蚀气体中加入CHF3 对刻蚀速率、图形形貌等的影响。纯氧刻蚀PMMA ,钻蚀现象严重。加入CHF3 后 ,刻蚀速率随CHF3 含量增加而下降。加入适量CHF3 ,可以在侧壁形成钝化层 ,保护侧壁不受钻蚀。当CHF3 含量为 4 0 % ,刻蚀功率 30W ,工作气压为 4Pa时 ,即使刻蚀深度达到 4 0 0 μm ,侧壁仍然陡直 ,刻蚀深宽比大于 10。Microstructures with high aspect ratio of polymethylmethacrylate (PMMA) film has been successfully fabricated by deep reactive ion etching.Influence of addition of CHF 3 to highly pure oxygen on the etching rate and profile was studied.We found that the etching rate decreases with an increase of CHF 3 concentration in the O 2/CHF 3 gaseous mixture.Addition of CHF 3 results in formation of side wall passivation layers,avoiding side wall undercut.Under optimized etching conditions:40% of CHF 3,30 W of discharge power,and 4 Pa pressure,the side wall profile is still fairly steep with an aspect ratio being higher than 10,even when the etching depth reaches 400 μm.

关 键 词：PMMA 反应离子刻蚀 比微结构 刻蚀气体 钻蚀 HGA技术 

分 类 号：TN305.7[电子电信—物理电子学]