准连续17kW808nm GaAs/AlGaAs叠层激光二极管列阵  

Quasi-CW 17 kW 808 nm GaAs/AlGaAs Stack Laser Diode Arrays

作　　者：方高瞻[1] 马骁宇[1] 王国宏[1] 谭满清[1] 蓝永生[1] 

机构地区：[1]中国科学院半导体研究所国家光电子器件工程研究中心,北京100083

出　　处：《中国激光》2004年第6期649-653,共5页Chinese Journal of Lasers

摘　　要：高功率激光二极管列阵广泛应用于抽运固体激光器。报道了 17kWGaAs/AlGaAs叠层激光二极管列阵的设计、制作过程和测试结果。为了提高器件的输出功率 ,一方面采用宽波导量子阱外延结构 ,降低腔面光功率密度 ,提高单个激光条的输出功率 ,通过金属有机物化学气相沉积 (MOCVD)方法进行材料生长 ,经过光刻、金属化、镀膜等工艺制备 1cm激光条 ,填充密度为 80 % ,单个激光条输出功率达 10 0W以上 ;另一方面器件采用高密度叠层封装结构 ,提高器件的总输出功率 ,实现了 16 0个激光条叠层封装 ,条间距 0 5mm。经测试 ,器件输出功率达 17kW ,峰值波长为 80 7 6nm ,谱线宽度为 4 9nm。High power 808nm laser diodes are widely used for pumping Nd∶YAG solid-state lasers. In this paper the design, fabrication and the test results of 17 kW GaAs/AlGaAs stack laser diode arrays are reported. In order to achieve higher power, one of approaches is to use a broad waveguide structure, which effectively reduces the intensity on the facets and allows for higher output power. The structures were grown by metalorganic chemical vapor deposition. The output power of 100 W of 1 cm monolithic laser bars with a 80% filled factor has been abtained; Additionally, the stack structure was used. The laser diode array comprises 160 bars. The pitch of bars is 0.5 mm. The output power of 17 kW has been abtained. The emitting peak wavelength is 807.6 nm and FHWM is 4.9 nm.

关 键 词：激光技术 激光二极管列阵 叠层 GAAS/ALGAAS 

分 类 号：TN248.4[电子电信—物理电子学]